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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 52 Watts Avg. Power Gain -- 13 dB Efficiency -- 24% IM3 -- -36 dBc ACPR -- -39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz, 180 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N-Channel Enhancement-Mode Lateral MOSFET
MRF5P21240R6
2170 MHz, 52 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFET
CASE 375D-04, STYLE 1 NI-1230
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 -0.5, +15 500 2.86 -65 to +150 200 180 Unit Vdc Vdc Watts W/C C C Watts
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Case Temperature 55C, 180 W CW Case Temperature 45C, 52 W CW Symbol RJC Max 0.35 0.40 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
MRF5P21240R6 1
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C6 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.75 -- pF VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- 2.8 3.8 0.26 7.5 4 5 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13 -- dB
22.5
24
--
%
IM3
--
-36
-34
dBc
ACPR
--
-39
-37
dBc
IRL
--
-12
-9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push-pull configuration.
MRF5P21240R6 2
MOTOROLA RF DEVICE DATA
B1 VGG R4 + C17 + C15 C13 C9 R1 C5 Z11 Z3 Z1 Z2 Z7 Z4 C2 B2 VGG R3 + C18 + C16 C14 C10 R2 C6 Z12 Z6 Z10 Z14 Z18 C1 DUT Z5 Z9 Z13 Z17 Z15
+ C19
+ C20
C8
C12
+ C21
+ C22
+
C27
VDD
Z19 C4
Z21 Z8
RF INPUT
Z23
Z24
RF OUTPUT
Z20 C3
Z22
Z16 + C23 + C24 + C25 + C26 + VDD
C7
C11
C28
Z1 Z2, Z23 Z3, Z22 Z4, Z21 Z5, Z6 Z7, Z8 Z9, Z10
0.898 x 0.080 Microstrip 0.775 x 0.136 Microstrip 0.060 x 0.080 Microstrip 1.867 x 0.080 Microstrip 0.443 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.490 x 0.540 Microstrip
Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z24 PCB
1.270 x 0.058 Microstrip 0.250 x 0.500 Microstrip 0.850 x 0.150 Microstrip 0.535 x 0.390 Microstrip 0.218 x 0.080 Microstrip 0.825 x 0.080 Microstrip Arlon GX-0300-55-22, 0.030, r = 2.55
Figure 1. MRF5P21240R6 Test Circuit Schematic Table 1. MRF5P21240R6 Test Circuit Component Designations and Values
Part B1, B2 C1, C2, C3, C4 C5, C6, C7, C8 C9, C10, C11, C12 C13, C14 C15, C16 C17, C18 C19, C20, C21, C22 C23, C24, C25, C26 C27, C28 R1, R2 R3, R4 Description Short Ferrite Beads 18 pF Chip Capacitors 6.8 pF Chip Capacitors 0.1 F Chip Capacitors 1000 pF Chip Capacitors 4.7 F Tantalum Capacitors 10 F Electrolytic Capacitors 22 F Tantalum Capacitors 100 F Electrolytic Capacitors 1.0 kW, 1/8 W Chip Resistors 10 W, 1/8 W Chip Resistors Value, P/N or DWG 2743019447 100B180JCA500X 100B6R8JCA500X CDR33BX104AKWS 100B102JCA500X T491C475M050 EEV-HB1H100P T491X226K035AS4394 517D107M050BB6A Manufacturer Fair Rite ATC ATC Kemet ATC Kemet Panasonic Kemet Sprague
MOTOROLA RF DEVICE DATA
MRF5P21240R6 3
MRF5P21240 Rev. 5
C17
C15
C13 C9 B1 R1
C19 C8 C5 C20
C22
C12
C27
R4
C21
C1 CUT OUT AREA
C4
C2 C24
C3
R3 B2 R2 C18 C16 C14 C10
C6
C25
C23
C7
C26 C11
C28
Figure 2. MRF5P21240R6 Test Circuit Component Layout
MRF5P21240R6 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -5 -10 -15 -20 -25 -30 IDQ = 2640 mA 2420 mA 2200 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 10 100 300 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) 15 14 13 G ps , POWER GAIN (dB) 12 11 IRL IM3 ACPR 2100 2120 2140 2160 2180 9 8 7 6 5 2080 10 Gps VDD = 28 Vdc, Pout = 52 W (Avg.), IDQ = 2200 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 40 35 30 25 20 -25 -30 -35 -40 -45 -50 2200
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
14
2420 mA G ps , POWER GAIN (dB) 13.5 2200 mA
IMD,THIRD ORDER INTERMODULATION DISTORTION (dBc)
IDQ = 2640 mA
-25 -30 -35 -40 -45
13
1980 mA 1760 mA
12.5 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 12 2 10 100 300
-50 1980 mA 1760 mA -55 2
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
-25 IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50 -55 5th Order 7th Order VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 2200 mA Two-Tone Measurements, Center Frequency = 2140 MHz 0.1 1 TWO-TONE SPACING (MHz) 10 30 3rd Order
60 59 Pout , OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 36 37 38 39 40 VDD = 28 Vdc, IDQ = 2200 mA Pulse CW, 8 sec(on), 1.6 msec(off) Center Frequency = 2140 MHz 41 42 43 44 45 46 Pin, INPUT POWER (dBm) P3dB = 55.03 dBm (318.24 W) P1dB = 54.36 dBm (272.9 W) Actual Ideal
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MOTOROLA RF DEVICE DATA
MRF5P21240R6 5
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 25 20 15 10 5 0 VDD = 28 Vdc, IDQ = 2200 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) -25 -30 IM3 (dBc), ACPR (dBc) IM3 ACPR Gps -35 -40 -45 -50 -55 -20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 -25 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW
1
10 Pout, OUTPUT POWER (WATTS, Avg.) W-CDMA
100
f, FREQUENCY (MHz)
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 MTBF FACTOR (HOURS x AMPS 2 ) 109
Figure 9. 2-Carrier W-CDMA Spectrum
108
107
0
2
4
6
8
10
106 100
120
140
160
180
200
220
PEAK-TO-AVERAGE (dB)
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application.
Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal
Figure 11. MTBF Factor versus Junction Temperature
MRF5P21240R6 6
MOTOROLA RF DEVICE DATA
f = 2190 MHz
Zload* f = 2090 MHz f = 2190 MHz Zsource f = 2090 MHz Zo = 25
VDD = 28 V, IDQ = 2 x 1100 mA, Pout = 52 W Avg. f MHz 2090 2110 2130 2150 2170 2190 Zsource 5.33 - j6.21 5.44 - j5.88 5.40 - j6.16 5.12 - j6.06 4.96 - j5.25 4.98 - j4.47 Zload 11.42 - j2.25 10.45 - j2.16 11.28 - j2.14 11.38 - j2.14 11.04 - j1.25 10.73 - j0.40
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 12. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
MRF5P21240R6 7
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3 4X
4
K aaa
M
4X
(FLANGE) M
B
D
TA
B
M
ccc ccc
M
M
TA
(LID)
M
B
M
TA N (LID)
M
B
M
R
H C
F
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
(INSULATOR)
S
bbb
M
TA
M
B
M
TA
M
B
M
CASE 375D-04 ISSUE C NI-1230
STYLE 1: PIN 1. 2. 3. 4. 5.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF5P21240R6 8
MOTOROLA RF DEVICE DATA
MRF5P21240/D

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